Samsung to Build Ultra High-Speed Mobile DRAM Chip

20 nm LPDDR3 Mobile DRAM | Samsung

20 nm LPDDR3 Mobile DRAM | Samsung

Last Tuesday, Samsung announced the production of the first ultra-high-speed, 4 GB low-power mobile DRAM chip. The said chip will use the company’s most compact and latest circuitry. According to Young-Hyun Jun, Samsung Electronics’s executive vice president of memory sales:

By providing the most efficient next-generation mobile memory with a large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace.

Manufactured using the 20-nanometer process, the new LPDDR3 mobile DRAM can transmit data of up to 2.1 Gbps per pin. It is more than double of the standard mobile DRAM LPDDR2, which can transmit data of up to 800 Mbps.

Simply put, the LPDDR3 can transmit three full HD videos—that are 17 GB in length—in one second.

Better Performance; Lesser Power Consumption

In addition, the South Korean tech giant said that the LPDDR3 mobile DRAM can seamlessly display full HD video on smartphones, which boasts 5-inch or larger screens.

Compared to a 30 nm-class LPDDR3 DRAM, the new mobile chip generates over 30 percent improvement while consuming 20 percent less power. It also offers mobile devices with 2 GB memory by using four of the new chips that measure about 0.8mm in height.

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